ROHM Semiconductor EM6J1T2R MOSFETs Transistors Arrays
20V
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EM6J1T2R Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 17 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Max Power Dissipation | 150mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | *J1 | |
| Pin Count | 6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150mW | |
| Turn On Delay Time | 6 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 200mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V | |
| Rise Time | 4ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 17 ns | |
| Continuous Drain Current (ID) | 200mA | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain Current-Max (Abs) (ID) | 0.2A | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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EM6J1T2R Documents
Download datasheets and manufacturer documentation for EM6J1T2R
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