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- EMF4T2R
ROHM Semiconductor EMF4T2R BJT Transistors Arrays
150mW 50V, 12V
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EMF4T2R Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Manufacturer | ROHM Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Surface Mount | YES | |
| Supplier Device Package | EMT6 | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Current-Collector (Ic) (Max) | 100mA, 500mA | |
| Base Product Number | EMF4 | |
| Mfr | Rohm Semiconductor | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-F6 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 10 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Manufacturer Part Number | EMF4T2R | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ROHM Semiconductor | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Risk Rank | 5.84 | |
| Part Package Code | SC-107 | |
| Series | - |
| JESD-609 Code | e2 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | BIP General Purpose Small Signal | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-F6 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| Power - Max | 150mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN AND PNP | |
| Transistor Type | 1 NPN - Pre-Biased, 1 PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V / 270 @ 10mA, 2V | |
| Current - Collector Cutoff (Max) | 500nA, 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V | |
| Frequency - Transition | 250MHz, 260MHz | |
| Power Dissipation-Max (Abs) | 0.15 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 20 | |
| Resistor - Base (R1) | 2.2kOhms | |
| Resistor - Emitter Base (R2) | 2.2kOhms | |
| Collector-Emitter Voltage-Max | 50 V |
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