ROHM Semiconductor EMZ7T2R Arrays BJT Transistors
12V 500mA
IN STOCK
: 1500
Min. : 1
Mult. : 1
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EMZ7T2R Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 13 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Collector-Emitter Saturation Voltage | -100mV | |
| Number of Elements | 2 Elements | |
| hFEMin | 270 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Max Power Dissipation | 150mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | *MZ7 | |
| Pin Count | 6 | |
| Polarity | NPN, PNP | |
| Element Configuration | Dual | |
| Power Dissipation | 150mW | |
| Gain Bandwidth Product | 260MHz | |
| Transistor Type | NPN, PNP | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 500mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 10mA 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA | |
| Transition Frequency | 320MHz | |
| Max Breakdown Voltage | 12V | |
| Frequency - Transition | 320MHz 260MHz | |
| Collector Base Voltage (VCBO) | 15V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Max Junction Temperature (Tj) | 150°C | |
| Continuous Collector Current | 500mA | |
| Height | 550μm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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EMZ7T2R Documents
Download datasheets and manufacturer documentation for EMZ7T2R
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