IMT17T110 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer ROHM Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number MT17
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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