ROHM Semiconductor IMT4T108 Arrays BJT Transistors
500mV 50mA
IN STOCK
: 12000
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IMT4T108 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 9 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 120V | |
| Number of Elements | 2 Elements | |
| hFEMin | 180 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| HTS Code | 8541.21.00.75 | |
| Voltage - Rated DC | -120V | |
| Max Power Dissipation | 300mW | |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -50mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | MT4 | |
| Pin Count | 6 | |
| Polarity | PNP | |
| Element Configuration | Dual | |
| Power Dissipation | 300mW | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 140MHz | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 500nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA | |
| Transition Frequency | 140MHz | |
| Max Breakdown Voltage | 120V | |
| Collector Base Voltage (VCBO) | -120V | |
| Emitter Base Voltage (VEBO) | -5V | |
| VCEsat-Max | 0.5 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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IMT4T108 Documents
Download datasheets and manufacturer documentation for IMT4T108
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