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IMX9T110 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Collector-Emitter Saturation Voltage 180mV
Number of Elements 2 Elements
hFEMin 560
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Voltage - Rated DC 20V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MX9
Pin Count 6
Polarity NPN
Element Configuration Dual
Transistor Application AMPLIFIER
Gain Bandwidth Product 350MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 560 @ 10mA 3V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 500mA
Transition Frequency 350MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 500mA
VCEsat-Max 0.4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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