ROHM Semiconductor QH8MA4TCR MOSFETs Transistors Arrays
30V
IN STOCK
: 24000
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
QH8MA4TCR Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 20 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Number of Pins | 2Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 9A 8A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2015 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 1.5W | |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-F8 | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 8A | |
| Drain-source On Resistance-Max | 0.016Ohm | |
| DS Breakdown Voltage-Min | 30V | |
| Avalanche Energy Rating (Eas) | 3.5 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |
Select at least one checkbox above to show similar products in this category.
QH8MA4TCR Documents
Download datasheets and manufacturer documentation for QH8MA4TCR
- DatasheetsQH8MA4TCR-Rohm-datasheet-73765475.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ