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RE1L002SNTL Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 16 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-89, SOT-490 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 250mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 150mW Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2012 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-F3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.4 Ω @ 250mA, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 25V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| Drain Current-Max (Abs) (ID) | 0.25A | |
| Drain-source On Resistance-Max | 3.2Ohm | |
| DS Breakdown Voltage-Min | 60V | |
| RoHS Status | ROHS3 Compliant |
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RE1L002SNTL Documents
Download datasheets and manufacturer documentation for RE1L002SNTL
- PCN Assembly/OriginMult Dev 01/Feb/2020
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