RE1L002SNTL Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 250mA Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 150mW Ta
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 25V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.25A
Drain-source On Resistance-Max 3.2Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
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