RGCL80TK60GC11 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 35A
Number of Elements 1 Element
Test Conditions 400V, 40A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE
Case Connection ISOLATED
Input Type Standard
Power - Max 57W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 114 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Turn Off Time-Nom (toff) 565 ns
IGBT Type Trench Field Stop
Gate Charge 98nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 53ns/227ns
Switching Energy 1.11mJ (on), 1.68mJ (off)
RoHS Status ROHS3 Compliant
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