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RGT40NS65DGTL Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.946308g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.65V
Number of Elements 1 Element
Test Conditions 400V, 20A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Power Dissipation 161W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 161W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 40A
Reverse Recovery Time 58 ns
Max Breakdown Voltage 650V
Turn On Time 51 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Continuous Collector Current 20A
Turn Off Time-Nom (toff) 204 ns
IGBT Type Trench Field Stop
Gate Charge 40nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 22ns/75ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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