ROHM Semiconductor RGT60TS65DGC11 Single IGBTs
650V 55A
IN STOCK
Min. : 1
Mult. : 1
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RGT60TS65DGC11 Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 15 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Weight | 38.000013g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.65V | |
| Number of Elements | 1 Element | |
| Test Conditions | 400V, 30A, 10 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2014 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 |
| Max Power Dissipation | 194W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 194W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 55A | |
| Reverse Recovery Time | 58 ns | |
| Turn On Time | 70 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A | |
| Continuous Collector Current | 30A | |
| Turn Off Time-Nom (toff) | 218 ns | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 58nC | |
| Current - Collector Pulsed (Icm) | 90A | |
| Td (on/off) @ 25°C | 29ns/100ns | |
| REACH SVHC | Unknown | |
| RoHS Status | ROHS3 Compliant |
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RGT60TS65DGC11 Documents
Download datasheets and manufacturer documentation for RGT60TS65DGC11
- DatasheetsRGT60TS65D
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