RGTH60TS65DGC11 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.6V
Number of Elements 1 Element
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 194W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 194W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 58A
Reverse Recovery Time 58 ns
Turn On Time 67 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 179 ns
IGBT Type Trench Field Stop
Gate Charge 58nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 27ns/105ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Select at least one checkbox above to show similar products in this category.
View Similar

RGTH60TS65DGC11 Documents

Download datasheets and manufacturer documentation for   RGTH60TS65DGC11

RGTH60TS65DGC11 brand manufacturers: ROHM Semiconductor, Elecinsight stock, RGTH60TS65DGC11 reference price.ROHM Semiconductor. RGTH60TS65DGC11 parameters, RGTH60TS65DGC11 Datasheet PDF and pin diagram description download.You can use the RGTH60TS65DGC11 Transistors - IGBTs - Single, DSP Datesheet PDF, find RGTH60TS65DGC11 pin diagram and circuit diagram and usage method of function,RGTH60TS65DGC11 electronics tutorials.You can download from the Elecinsight.