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 RK7002BT116 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 6 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 250mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 200mW Ta | |
| Turn Off Delay Time | 18 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 2.4Ohm | |
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Pin Count | 3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 200mW | |
| Turn On Delay Time | 3.5 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.4 Ω @ 250mA, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 25V | |
| Rise Time | 5ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 28 ns | |
| Continuous Drain Current (ID) | 250mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 0.25A | |
| Drain to Source Breakdown Voltage | 60V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free | 
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RK7002BT116 Documents
Download datasheets and manufacturer documentation for RK7002BT116
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