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RS1G180MNTB Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ROHM Semiconductor | |
| Factory Lead Time | 20 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 18A Ta 80A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3W Ta 30W Tc | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-F5 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 18A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1293pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 10V | |
| Drain to Source Voltage (Vdss) | 40V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 18A | |
| Drain-source On Resistance-Max | 0.0092Ohm | |
| Pulsed Drain Current-Max (IDM) | 72A | |
| DS Breakdown Voltage-Min | 40V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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RS1G180MNTB Documents
Download datasheets and manufacturer documentation for RS1G180MNTB
- DatasheetsRS1G180MN
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