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RU1J002YNTCL Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-85
Number of Pins 85Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 200mA Ta
Drive Voltage (Max Rds On, Min Rds On) 0.9V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 150mW Ta
Turn Off Delay Time 17 ns
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Vgs (Max) ±8V
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 2.8Ohm
Drain to Source Breakdown Voltage 50V
Max Junction Temperature (Tj) 150°C
Height 1.05mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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