RVQ040N05TR Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 20 Weeks
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4A Ta
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Turn Off Delay Time 40 ns
Power Dissipation (Max) 600mW Ta
Number of Elements 1 Element
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 53m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 5V
Rise Time 15ns
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 21V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.074Ohm
Drain to Source Breakdown Voltage 45V
Width 1.8mm
Length 3mm
Height 950μm
RoHS Status ROHS3 Compliant
Radiation Hardening No
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