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RYC002N05T316 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer ROHM Semiconductor
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 200mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 350mW Tc
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Drain to Source Voltage (Vdss) 50V
Vgs (Max) ±8V
Continuous Drain Current (ID) 200mA
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 2.8Ohm
DS Breakdown Voltage-Min 50V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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