ROHM Semiconductor SP8K1TB MOSFETs Transistors Arrays
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SP8K1TB Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ROHM Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 22 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Voltage - Rated DC | 30V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 5A | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | *K1 | |
| Pin Count | 8 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Turn On Delay Time | 6 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 51m Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V | |
| Rise Time | 8ns | |
| Fall Time (Typ) | 5 ns | |
| Continuous Drain Current (ID) | 5A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 5A | |
| Drain to Source Breakdown Voltage | 30V | |
| Pulsed Drain Current-Max (IDM) | 20A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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SP8K1TB Documents
Download datasheets and manufacturer documentation for SP8K1TB
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