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UMA5NTR Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Number of Pins 5Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 80
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 21
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number MA5
Pin Count 5
Polarity PNP
Element Configuration Dual
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) -5V
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47k Ω
VCEsat-Max 0.3 V
Height 900μm
Length 2.1mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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