US6M11TR Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.5A 1.3A
Number of Elements 2 Elements
Turn Off Delay Time 30 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 600MOhm
Terminal Finish TIN COPPER
Max Power Dissipation 1W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *M11
Pin Count 6
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 20V 12V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 1.5A
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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