Samsung IRFS740 Single MOSFETs Transistors
40 A
IN STOCK
: 2880
Min. : 1
Mult. : 1
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IRFS740 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Samsung | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Turn-off Time-Max (toff) | 111 ns | |
| Number of Elements | 1 Element | |
| Manufacturer | Samsung Semiconductor | |
| Package Shape | RECTANGULAR | |
| Turn-on Time-Max (ton) | 62 ns | |
| Manufacturer Part Number | IRFS740 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Style | FLANGE MOUNT | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Drain Current-Max (ID) | 5.4 A | |
| Part Package Code | SFM | |
| Risk Rank | 5.71 | |
| Subcategory | FET General Purpose Power |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-220AB | |
| Drain Current-Max (Abs) (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| DS Breakdown Voltage-Min | 400 V | |
| Avalanche Energy Rating (Eas) | 157 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 40 W | |
| Power Dissipation Ambient-Max | 40 W |
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