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K4H511638D-UCB3 Tech Specifications

Category Memory
Manufacturer Samsung
Surface Mount YES
Number of Terminals 66Terminals
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Moisture Sensitivity Levels 2
Number of Words Code 32000000Words Codes
Package Body Material PLASTIC/EPOXY
Package Equivalence Code TSSOP66,.46
Reflow Temperature-Max (s) NOT SPECIFIED
Access Time-Max 0.7 ns
Operating Temperature-Max 70 °C
Rohs Code Yes
Manufacturer Part Number K4H511638D-UCB3
Clock Frequency-Max (fCLK) 166 MHz
Number of Words 33554432 wordsWord
Supply Voltage-Nom (Vsup) 2.5 V
Package Code TSSOP
Package Shape RECTANGULAR
Manufacturer Samsung Semiconductor
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Risk Rank 5.82
JESD-609 Code e6
Pbfree Code Yes
Terminal Finish Tin/Bismuth (Sn97Bi3)
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Terminal Pitch 0.635 mm
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G66
Qualification Status Not Qualified
Power Supplies 2.5 V
Temperature Grade COMMERCIAL
Supply Current-Max 0.38 mA
Organization 32MX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.005 A
Memory Density 536870912 bit
I/O Type COMMON
Memory IC Type DDR DRAM
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Interleaved Burst Length 2,4,8
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