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- K4S561632J-UC75
Samsung K4S561632J-UC75 Memory ICs
Tape and Reel
IN STOCK
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Mult. : 1
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K4S561632J-UC75 Tech Specifications
| Category | Memory | |
| Manufacturer | Samsung | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 54Pins | |
| Number of Terminals | 54Terminals | |
| Manufacturer Package Identifier | TSOP(II)54 | |
| RoHS | Compliant | |
| Memory Types | SDRAM | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Moisture Sensitivity Levels | 2 | |
| Number of Words Code | 16000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 5.4 ns | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | K4S561632J-UC75 | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| Number of Words | 16777216 wordsWord | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Package Code | TSOP | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Samsung Semiconductor | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Risk Rank | 5.65 | |
| Packaging | Tape and Reel | |
| JESD-609 Code | e6 | |
| Pbfree Code | Yes | |
| Terminal Finish | Tin/Bismuth (Sn97Bi3) | |
| Max Operating Temperature | 70 °C | |
| Min Operating Temperature | 0 °C | |
| Subcategory | DRAMs |
| Technology | CMOS | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Pitch | 0.8 mm | |
| Reach Compliance Code | unknown | |
| Frequency | 133 MHz | |
| JESD-30 Code | R-PDSO-G54 | |
| Qualification Status | Not Qualified | |
| Operating Supply Voltage | 3.3 V | |
| Power Supplies | 3.3 V | |
| Temperature Grade | COMMERCIAL | |
| Interface | Parallel | |
| Max Supply Voltage | 3.6 V | |
| Min Supply Voltage | 3 V | |
| Memory Size | 32 MB | |
| Nominal Supply Current | 110 mA | |
| Supply Current-Max | 0.12 mA | |
| Access Time | 7.5 ns | |
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 16 | |
| Address Bus Width | 15 b | |
| Density | 256 Mb | |
| Standby Current-Max | 0.002 A | |
| Memory Density | 268435456 bit | |
| Max Frequency | 133 MHz | |
| I/O Type | COMMON | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Interleaved Burst Length | 1,2,4,8 | |
| Height | 1.2 mm | |
| Lead Free | Lead Free |
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