M470T2864EH3-CE6 Tech Specifications

Category Memory Cards
Manufacturer Samsung
ECCN (US) 4A994.a
Module DRAM Module
Module Density 1Gbyte
Number of Chip per Module 8Chip per Modules
Chip Density (bit) 1G
Data Bus Width (bit) 64
Max. Access Time (ns) 0.45
Maximum Clock Rate (MHz) 667
Chip Configuration 64Mx16
Chip Package Type FBGA
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 428
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Module Sides Double
ECC Support No
Number of Ranks DualRank
Number of Chip Banks 8Chip Banks
CAS Latency 5
SPD EEPROM Support Yes
Standard Package Name DIM
Supplier Package USODIMM
Mounting Socket
Package Height 30
Package Length 67.6
Package Width 3.8(Max)
PCB changed 200
Lead Shape No Lead
Part Status Obsolete
Pin Count 200
Organization 128Mx64
PLL No
Self Refresh Yes
Module Type 200SODIMM
RoHS Status RoHS Compliant
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