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Samsung Electronics M470T5663EH3-CF7RA Memory Cards
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M470T5663EH3-CF7RA Tech Specifications
| Category | Memory Cards | |
| Manufacturer | Samsung | |
| ECCN (US) | 4A994.a | |
| Module | DRAM Module | |
| Module Density | 2Gbyte | |
| Number of Chip per Module | 16Chip per Modules | |
| Chip Density (bit) | 1G | |
| Data Bus Width (bit) | 64 | |
| Max. Access Time (ns) | 0.4 | |
| Maximum Clock Rate (MHz) | 800 | |
| Chip Configuration | 128Mx8 | |
| Chip Package Type | FBGA | |
| Minimum Operating Supply Voltage (V) | 1.7 | |
| Typical Operating Supply Voltage (V) | 1.8 | |
| Maximum Operating Supply Voltage (V) | 1.9 | |
| Operating Current (mA) | 1256 | |
| Minimum Operating Temperature (°C) | 0 | |
| Maximum Operating Temperature (°C) | 95 | |
| Supplier Temperature Grade | Commercial | |
| Module Sides | Double |
| ECC Support | No | |
| Number of Ranks | DualRank | |
| Number of Chip Banks | 8Chip Banks | |
| CAS Latency | 6 | |
| SPD EEPROM Support | Yes | |
| Standard Package Name | DIM | |
| Supplier Package | USODIMM | |
| Mounting | Socket | |
| Package Height | 30 | |
| Package Length | 67.6 | |
| Package Width | 3.8(Max) | |
| PCB changed | 200 | |
| Lead Shape | No Lead | |
| Part Status | Obsolete | |
| Pin Count | 200 | |
| Organization | 256Mx64 | |
| PLL | No | |
| Self Refresh | Yes | |
| Module Type | 200SODIMM | |
| RoHS Status | RoHS Compliant |
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M470T5663EH3-CF7RA Documents
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