Samsung Semiconductor IRFZ12 Specialized Transistors
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IRFZ12 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | Samsung | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Drain Current-Max (ID) | 8.3 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Max (toff) | 49 ns | |
| Turn-on Time-Max (ton) | 90 ns | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-220AB | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| DS Breakdown Voltage-Min | 50 V | |
| Avalanche Energy Rating (Eas) | 2.2 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 20 W | |
| Power Dissipation Ambient-Max | 42 W |
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