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Samsung Semiconductor K4A4G165WE-BCWE Memory ICs
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K4A4G165WE-BCWE Tech Specifications
| Category | Memory | |
| Manufacturer | Samsung | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8542.32.00.36 | |
| Automotive | No | |
| PPAP | No | |
| DRAM Type | DDR4 SDRAM | |
| Chip Density (bit) | 4G | |
| Number of Internal Banks | 16Internal Banks | |
| Number of Words per Bank | 16M | |
| Number of Bits/Word (bit) | 16Bits/Word (bit)s | |
| Data Bus Width (bit) | 16 | |
| Maximum Clock Rate (MHz) | 3200 |
| Interface Type | POD | |
| Typical Operating Supply Voltage (V) | 1.2 | |
| Minimum Operating Temperature (°C) | 0 | |
| Maximum Operating Temperature (°C) | 85 | |
| Supplier Temperature Grade | Commercial | |
| Number of I/O Lines (bit) | 16I/O Lines (bit)s | |
| Mounting | Surface Mount | |
| Package Width | 7.5 | |
| Package Length | 13.3 | |
| PCB changed | 96 | |
| Supplier Package | FBGA | |
| Part Status | Active | |
| Pin Count | 96 | |
| Organization | 256Mx16 |
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