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K4B1G1646I-BCNB0CV Tech Specifications

Category Memory
Manufacturer Samsung
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 2133
Address Bus Width (bit) 16
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Supplier Package FBGA
Part Status Active
Pin Count 96
Organization 64Mx16
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