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K4B1G1646I-BMMA0CV Tech Specifications

Category Memory
Manufacturer Samsung
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1866
Maximum Access Time (ns) 0.195
Address Bus Width (bit) 16
Minimum Operating Supply Voltage (V) 1.425|1.283
Typical Operating Supply Voltage (V) 1.5|1.35
Maximum Operating Supply Voltage (V) 1.575|1.45
Operating Current (mA) 134
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Industrial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status LTB
Pin Count 96
Organization 64Mx16
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