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Samsung Semiconductor K4B2G0846F-BCNB000 Memory ICs
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K4B2G0846F-BCNB000 Tech Specifications
| Category | Memory | |
| Manufacturer | Samsung | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| DRAM Type | DDR3 SDRAM | |
| Chip Density (bit) | 2G | |
| Number of Internal Banks | 8Internal Banks | |
| Number of Words per Bank | 32M | |
| Number of Bits/Word (bit) | 8Bits/Word (bit)s | |
| Data Bus Width (bit) | 8 | |
| Maximum Clock Rate (MHz) | 2133 | |
| Address Bus Width (bit) | 18 | |
| Interface Type | SSTL_1.5 | |
| Minimum Operating Supply Voltage (V) | 1.425 | |
| Typical Operating Supply Voltage (V) | 1.5 |
| Maximum Operating Supply Voltage (V) | 1.575 | |
| Operating Current (mA) | 105 | |
| Minimum Operating Temperature (°C) | 0 | |
| Maximum Operating Temperature (°C) | 95 | |
| Supplier Temperature Grade | Commercial | |
| Number of I/O Lines (bit) | 8I/O Lines (bit)s | |
| Mounting | Surface Mount | |
| Package Width | 7.5 | |
| Package Length | 11 | |
| PCB changed | 78 | |
| Standard Package Name | BGA | |
| Supplier Package | FBGA | |
| Lead Shape | Ball | |
| Part Status | LTB | |
| Pin Count | 78 | |
| Organization | 256Mx8 |
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