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- K4B2G0846Q-BCK0T00
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K4B2G0846Q-BCK0T00 Tech Specifications
| Category | Memory | |
| Manufacturer | Samsung | |
| EU RoHS | Supplier Unconfirmed | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| DRAM Type | DDR3 SDRAM | |
| Chip Density (bit) | 2G | |
| Number of Internal Banks | 8Internal Banks |
| Number of Words per Bank | 32M | |
| Number of Bits/Word (bit) | 8Bits/Word (bit)s | |
| Data Bus Width (bit) | 8 | |
| Minimum Operating Supply Voltage (V) | 1.425 | |
| Typical Operating Supply Voltage (V) | 1.5 | |
| Maximum Operating Supply Voltage (V) | 1.575 | |
| Part Status | Obsolete | |
| Organization | 256Mx8 |
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