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- K4M28163LH-BN75
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K4M28163LH-BN75 Tech Specifications
| Category | Memory | |
| Manufacturer | Samsung | |
| Surface Mount | YES | |
| Number of Terminals | 54Terminals | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | FBGA, BGA54,9X9,32 | |
| Access Time-Max | 5.4 ns | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Package Shape | SQUARE | |
| Package Equivalence Code | BGA54,9X9,32 | |
| Package Code | FBGA | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -25 °C | |
| Operating Temperature-Max | 85 °C | |
| Number of Words Code | 8000000Words Codes | |
| Number of Words | 8388608 wordsWord | |
| Moisture Sensitivity Levels | 1 | |
| JESD-609 Code | e3 |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| HTS Code | 8542.32.00.02 | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | S-PBGA-B54 | |
| Qualification Status | Not Qualified | |
| Temperature Grade | OTHER | |
| Supply Current-Max | 0.13 mA | |
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 16 | |
| Standby Current-Max | 0.0005 A | |
| Memory Density | 134217728 bit | |
| I/O Type | COMMON | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Refresh Cycles | 4096 | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Interleaved Burst Length | 1,2,4,8 |
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K4M28163LH-BN75 Documents
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