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- K4S641633H-BL75
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K4S641633H-BL75 Tech Specifications
| Category | Memory | |
| Manufacturer | Samsung | |
| Surface Mount | YES | |
| Number of Terminals | 54Terminals | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Access Time-Max | 5.4 ns | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| Number of Words | 4194304 wordsWord | |
| Number of Words Code | 4000000Words Codes | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | -25 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA54,9X9,32 | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, FINE PITCH | |
| ECCN Code | EAR99 |
| HTS Code | 8542.32.00.02 | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | S-PBGA-B54 | |
| Qualification Status | Not Qualified | |
| Temperature Grade | OTHER | |
| Supply Current-Max | 0.135 mA | |
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 16 | |
| Standby Current-Max | 0.0005 A | |
| Memory Density | 67108864 bit | |
| I/O Type | COMMON | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Refresh Cycles | 4096 | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Interleaved Burst Length | 1,2,4,8 |
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K4S641633H-BL75 Documents
Download datasheets and manufacturer documentation for K4S641633H-BL75
- DatasheetsSAMSS09315-1.pdf
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