K4X56323PI-8GC3000 Tech Specifications

Category Memory
Manufacturer Samsung
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type Mobile-DDR SDRAM
Chip Density (bit) 256M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 2M
Number of Bits/Word (bit) 32Bits/Word (bit)s
Data Bus Width (bit) 32
Maximum Clock Rate (MHz) 266
Maximum Access Time (ns) 6|8
Address Bus Width (bit) 14
Interface Type LVCMOS
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.95
Operating Current (mA) 110
Minimum Operating Temperature (°C) -25
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Extended
Number of I/O Lines (bit) 32I/O Lines (bit)s
Mounting Surface Mount
Package Height 1(Max) - 0.25(Min)
Package Width 8
Package Length 13
PCB changed 90
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Packaging Tray
Part Status Obsolete
Pin Count 90
Organization 8Mx32
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