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K9F5608U0B-YCB0000 Tech Specifications

Category USB Flash Drives
Manufacturer Samsung
EU RoHS Not Compliant
ECCN (US) 3A991.b.1.a
Automotive No
PPAP No
Cell Type SLC NAND
Chip Density (bit) 256M
Block Organization Symmetrical
Address Bus Width (bit) 8
Number of Bits/Word (bit) 8Bits/Word (bit)s
Number of Words 32MWord
Programmability Yes
Timing Type Asynchronous
Max. Access Time (ns) 10000
Maximum Erase Time (S) 0.003/Block
Maximum Page Access Time (ns) 50(Min)
Maximum Programming Time (ms) 0.5/Page
Interface Type Parallel
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3.3
Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 20
Program Current (mA) 20
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 70
Supplier Temperature Grade Commercial
Command Compatible No
ECC Support Yes
Support of Page Mode Yes
Packaging Tray
Part Status Unconfirmed
Architecture Sectored
Sector Size 16Kbyte x 2048
Page Size 512byte
Boot Block No
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