Samsung Semiconductor SGH80N60UFD Single IGBTs
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SGH80N60UFD Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Samsung | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TO-3P | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 167 ns | |
| Turn-on Time-Nom (ton) | 50 ns | |
| ECCN Code | EAR99 |
| Additional Feature | HIGH SPEED SWITCHING | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Fall Time-Max (tf) | 280 ns |
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SGH80N60UFD Documents
Download datasheets and manufacturer documentation for SGH80N60UFD
- Datasheets6c5ddaf0461c9035291f3ddb8b74ef20.pdf
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