2SA2151 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Sanken
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 200V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Bulk
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 160W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 160W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 3A 4V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Transition Frequency 20MHz
Frequency - Transition 20MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
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