2SD2083 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Sanken
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 25A
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.05
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max 120W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 12A 4V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 24mA, 12A
Voltage - Collector Emitter Breakdown (Max) 120V
Transition Frequency 20MHz
Frequency - Transition 20MHz
Power Dissipation-Max (Abs) 120W
RoHS Status RoHS Compliant
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2SD2083 Documents

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