2SD2389 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Sanken
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 150V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Bulk
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR
Max Power Dissipation 80W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration DARLINGTON WITH BUILT-IN RESISTOR
Power - Max 80W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 6A 4V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2.5V @ 6mA, 6A
Transition Frequency 80MHz
Frequency - Transition 80MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
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