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2SD2389 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Sanken | |
| Factory Lead Time | 24 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 150V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Published | 1999 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | BUILT-IN BIAS RESISTOR | |
| Max Power Dissipation | 80W | |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | DARLINGTON WITH BUILT-IN RESISTOR | |
| Power - Max | 80W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Darlington | |
| Collector Emitter Voltage (VCEO) | 2.5V | |
| Max Collector Current | 8A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 6A 4V | |
| Current - Collector Cutoff (Max) | 100μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 6A | |
| Transition Frequency | 80MHz | |
| Frequency - Transition | 80MHz | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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2SD2389 Documents
Download datasheets and manufacturer documentation for 2SD2389
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