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S8050-H Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Micro Crystal | |
| RoHS | true | |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V | |
| Power Dissipation (Pd) | 300mW | |
| DC Current Gain (hFE@Ic,Vce) | 350@50mA,1V |
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