Siemens BSP52 Single BJT Transistors
80 V 1.5 W 1 A 2000
IN STOCK
Min. : 1
Mult. : 1
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BSP52 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Siemens | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| Turn-off Time-Max (toff) | 1500 ns | |
| Turn-on Time-Max (ton) | 400 ns | |
| JESD-609 Code | e0 |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | DARLINGTON | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 1.5 W | |
| Collector Current-Max (IC) | 1 A | |
| DC Current Gain-Min (hFE) | 2000 | |
| Collector-Emitter Voltage-Max | 80 V | |
| VCEsat-Max | 1.8 V | |
| Power Dissipation Ambient-Max | 1.5 W |
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BSP52 Documents
Download datasheets and manufacturer documentation for BSP52
- Datasheets82ddd7b246df6d083cc16f32d8793e8d.pdf
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