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2N6359
| Transistors - Bipolar (BJT) - Single | ||
| Spectrum | ||
| Surface Mount | NO | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | API TECHNOLOGIES CORP | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Transition Frequency-Nom (fT) | 10 MHz | |
| ECCN Code | EAR99 |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-3 | |
| Power Dissipation-Max (Abs) | 150 W | |
| Collector Current-Max (IC) | 30 A | |
| DC Current Gain-Min (hFE) | 15 | |
| Collector-Emitter Voltage-Max | 80 V | |
| VCEsat-Max | 1.4 V |
2N6359
Download datasheets and manufacturer documentation for 2N6359
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