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2STF1360 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer STMicroelectronics
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 180mV
Collector-Emitter Breakdown Voltage 60V
hFEMin 160
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 80V
Max Power Dissipation 1.4W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2STF13
Pin Count 3
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 3A
Transition Frequency 130MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Length 4.6mm
Height 1.6mm
Width 2.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2STF1360 Documents

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