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BD140-16 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 6 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier SOT-32-0016114E
Collector-Emitter Breakdown Voltage 80V
Collector-Emitter Saturation Voltage -500mV
Current-Collector (Ic) (Max) 1.5A
Number of Elements 1 Element
hFEMin 25
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 1.25W
Base Part Number BD140
Element Configuration Single
Power Dissipation 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -80V
Max Collector Current -3A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2V 150MA
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 75MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 150°C
Height 13.2mm
Length 7.8mm
Width 2.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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