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MJD117T4 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage -100V
Collector-Emitter Saturation Voltage 3V
Current-Collector (Ic) (Max) 2A
Number of Elements 1 Element
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC -100V
Max Power Dissipation 20W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MJD117
Pin Count 3
JESD-30 Code R-PSSO-G2
Polarity PNP
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 25MHz
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Max Junction Temperature (Tj) 150°C
VCEsat-Max 3 V
Height 2.63mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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