STMicroelectronics MJD32CT4 Single BJT Transistors
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MJD32CT4 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | STMicroelectronics | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 100V | |
| Collector-Emitter Saturation Voltage | -1.2V | |
| Number of Elements | 1 Element | |
| hFEMin | 20 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | -100V | |
| Max Power Dissipation | 15W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -3A |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | MJD32 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Power Dissipation | 15W | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 100V | |
| Max Collector Current | 3A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A 4V | |
| Current - Collector Cutoff (Max) | 50μA | |
| JEDEC-95 Code | TO-252AA | |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | |
| Max Breakdown Voltage | 100V | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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MJD32CT4 Documents
Download datasheets and manufacturer documentation for MJD32CT4
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