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NAND01GW3A2AN6E Tech Specifications
| Category | Memory | |
| Manufacturer | STMicroelectronics | |
| Surface Mount | YES | |
| Package / Case | 48-TFSOP (0.724, 18.40mm Width) | |
| Mounting Type | Surface Mount | |
| Memory Types | Non-Volatile | |
| Packaging | Tube | |
| Operating Temperature | -40°C~85°C TA | |
| JESD-609 Code | e3/e6 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 48Terminations | |
| ECCN Code | 3A991.B.1.A | |
| Terminal Finish | TIN/TIN BISMUTH | |
| HTS Code | 8542.32.00.51 | |
| Voltage - Supply | 2.7V~3.6V | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Supply Voltage | 3V | |
| Terminal Pitch | 0.5mm | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | NAND01 | |
| Pin Count | 48 | |
| JESD-30 Code | R-PDSO-G48 | |
| Qualification Status | Not Qualified |
| Supply Voltage-Max (Vsup) | 3.6V | |
| Power Supplies | 3/3.3V | |
| Supply Voltage-Min (Vsup) | 2.7V | |
| Memory Size | 1Gb 128M x 8 | |
| Operating Mode | ASYNCHRONOUS | |
| Memory Format | FLASH | |
| Memory Interface | Parallel | |
| Organization | 128MX8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 30ns | |
| Standby Current-Max | 0.0001A | |
| Memory Density | 1073741824 bit | |
| Access Time (Max) | 12000 ns | |
| Programming Voltage | 3V | |
| Data Polling | NO | |
| Toggle Bit | NO | |
| Command User Interface | YES | |
| Number of Sectors/Size | 8K | |
| Sector Size | 16K | |
| Page Size | 512words | |
| Ready/Busy | YES | |
| Width | 12mm | |
| Height Seated (Max) | 1.2mm | |
| Length | 18.4mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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NAND01GW3A2AN6E Documents
Download datasheets and manufacturer documentation for NAND01GW3A2AN6E
- DatasheetsNAND01G-B, NAND02G-B
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