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PD55008-E Tech Specifications
Category | Transistors - FETs, MOSFETs - RF | |
Manufacturer | STMicroelectronics | |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
Factory Lead Time | 25 Weeks | |
Mount | Surface Mount | |
Package / Case | PowerSO-10 Exposed Bottom Pad | |
Number of Pins | 3Pins | |
Number of Elements | 1 Element | |
Usage Level | Military grade | |
Packaging | Tube | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Number of Terminations | 2Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Max Operating Temperature | 165°C | |
Min Operating Temperature | -65°C | |
Additional Feature | HIGH RELIABILITY | |
Voltage - Rated DC | 40V | |
Max Power Dissipation | 52.8W | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 250 | |
Current Rating | 4A | |
Frequency | 500MHz | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | PD55008 |
Pin Count | 10 | |
JESD-30 Code | R-PDSO-G2 | |
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 52.8W | |
Case Connection | SOURCE | |
Current - Test | 150mA | |
Transistor Application | AMPLIFIER | |
Drain to Source Voltage (Vdss) | 40V | |
Polarity/Channel Type | N-CHANNEL | |
Transistor Type | LDMOS | |
Continuous Drain Current (ID) | 4A | |
Gate to Source Voltage (Vgs) | 20V | |
Max Output Power | 8W | |
Drain Current-Max (Abs) (ID) | 4A | |
Drain to Source Breakdown Voltage | 40V | |
Input Capacitance | 58pF | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Voltage - Test | 12.5V | |
Min Breakdown Voltage | 40V | |
Power Gain | 17dB | |
Height | 3.5mm | |
Length | 7.5mm | |
Width | 9.4mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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PD55008-E Documents
Download datasheets and manufacturer documentation for PD55008-E
- DatasheetsPD55008(S)-E
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