PD55008-E Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 25 Weeks
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3Pins
Number of Elements 1 Element
Usage Level Military grade
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 40V
Max Power Dissipation 52.8W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Current Rating 4A
Frequency 500MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PD55008
Pin Count 10
JESD-30 Code R-PDSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52.8W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Max Output Power 8W
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 40V
Input Capacitance 58pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Min Breakdown Voltage 40V
Power Gain 17dB
Height 3.5mm
Length 7.5mm
Width 9.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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