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PD57018-E Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 25 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3Pins
Number of Elements 1 Element
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 65V
Max Power Dissipation 31.7W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Current Rating 2.5A
Frequency 945MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PD57018
Pin Count 10
JESD-30 Code R-PDSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 31.7W
Case Connection SOURCE
Current - Test 100mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Max Output Power 18W
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 760mOhm
Voltage - Test 28V
Min Breakdown Voltage 65V
Power Gain 16.5dB
Height 3.5mm
Length 7.5mm
Width 9.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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