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PD57018TR-E Tech Specifications
Category | Transistors - FETs, MOSFETs - RF | |
Manufacturer | STMicroelectronics | |
Factory Lead Time | 25 Weeks | |
Mount | Surface Mount | |
Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | |
Number of Pins | 3Pins | |
Number of Elements | 1 Element | |
Packaging | Tape & Reel (TR) | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Number of Terminations | 2Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | MATTE TIN | |
Max Operating Temperature | 165°C | |
Min Operating Temperature | -65°C | |
Additional Feature | HIGH RELIABILITY | |
Max Power Dissipation | 31.7W | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 250 | |
Reach Compliance Code | not_compliant | |
Current Rating | 2.5A | |
Frequency | 945MHz |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | PD57018 | |
Pin Count | 10 | |
JESD-30 Code | R-PDSO-G2 | |
Qualification Status | Not Qualified | |
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 31.7W | |
Case Connection | SOURCE | |
Current - Test | 100mA | |
Transistor Application | AMPLIFIER | |
Drain to Source Voltage (Vdss) | 65V | |
Polarity/Channel Type | N-CHANNEL | |
Transistor Type | LDMOS | |
Continuous Drain Current (ID) | 2.5A | |
Gate to Source Voltage (Vgs) | 20V | |
Gain | 16.5dB | |
Max Output Power | 18W | |
Drain to Source Breakdown Voltage | 65V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Drain to Source Resistance | 760mOhm | |
Voltage - Test | 28V | |
RoHS Status | ROHS3 Compliant |
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PD57018TR-E Documents
Download datasheets and manufacturer documentation for PD57018TR-E
- DatasheetsPD57018(S)-E
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